Samsung Electronics announced on the 25th that it has completed the development of the industry’s first 512GB (GB) DDR5 DRAM applying the Hi-K metal gate (HKMG) process. It plans to commercialize in a timely manner aiming at the next-generation computing market.
The HKMG process refers to the application of a material with a high dielectric constant (K) (High-K, Hi-K) to prevent leakage current due to miniaturization of the semiconductor process. Through this, the produced DDR5 DRAM module can reduce power consumption by about 13% compared to the existing process.
Samsung Electronics expects that DDR5 DRAM-based high-capacity modules will become a key solution for the development of advanced industries such as next-generation computing, large-capacity data centers, and artificial intelligence. For the first time as a general-purpose product, the 8-stage TSV (Through Silicon Via) technology was also applied to DDR5 DRAM.
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DDR5 is a next-generation DRAM standard and features a maximum transmission speed of 7200 megabits per second (Mbps). This is more than twice as fast as the existing DDR4, and it can transfer two UHD-class movies (about 30GB) in one second.
“Samsung Electronics applied the HKMG process to memory semiconductors for the first time in the industry based on its competitiveness in memory semiconductor and system semiconductor technology,” said Sohn Young-soo, executive director of the product planning team of Samsung Electronics’ memory division. It is expected that it will further accelerate the development of high-performance computers that will expand their application fields to autonomous driving, smart cities, and the medical industry with energy efficiency.”
☞ Terminology: HKMG (High-K Metal Gate)
HKMG refers to a process technology in which a material with a high dielectric constant is applied to effectively reduce the leakage current that increases as the process becomes finer. This provides the advantage of reducing the power consumption of the product and increasing the degree of integration of the circuit compared to the existing technology.