Samsung Electronics develops ‘512GB DDR5 memory’ applied for the first time in HKMG process

‘Strengthening’ cooperation with Intel to accelerate DDR5 memory transition

Samsung Electronics announced on the 25th that it has developed the industry’s largest 512GB DDR5 memory module. At the same time, it accelerates the transition to DDR5, the next-generation DRAM by strengthening cooperation with Intel.

DDR5 is the 5th generation DRAM commercialized last year. It boasts a processing speed that is more than twice as fast as the existing DDR4. In the future, the data transmission rate is expected to expand to 7200Mbps. This is the speed that can process about 2 UHD movies with a capacity of 30GB per second.

DDR5 developed by Samsung Electronics is characterized by applying the’Hi-K Metal Gate (HKMG)’ process for the first time in the industry. Compared to the existing process, power consumption can be reduced by about 13%. It is expected to be highly utilized in applications where power efficiency is important, such as in data centers.

At the same time, a material with a high dielectric constant (K) was applied to the process to achieve high performance and low power at the same time. This is to prevent leakage current due to miniaturization of the memory semiconductor process.

This DDR5 is the first general-purpose DRAM product to use 8-stage Through Silicon Via (TSV) technology. Samsung Electronics applied a 4-stage TSV process to general-purpose DDR4 memory for the first time in the world in 2014.

“DDR5 memory applied with the HKMG process is expected to accelerate the development of high-performance computers such as autonomous driving, smart city, and medical industry with excellent performance and high energy efficiency,” said Sohn Young-soo, executive director of the product planning team of Samsung Electronics’ memory division. We plan to commercialize it in a timely manner according to customer demand in the market.”

Carolyn Duran, executive vice president of Intel Memory & IO Technology, said, “We are working closely with Samsung Electronics to introduce DDR5 memory compatible with Sapphire Rapids, an Intel Xeon scalable processor.”

Copyright © The Elec, the electronic component specialty media Unauthorized reproduction and redistribution are prohibited.

.Source