■’DDR5′ with innovative process applied
Putting the lead in’high capacity, high performance, low power’
Data center, supercomputing, etc.
Collaboration with Intel for’Foundry’s release sheet’
Expected to expand the base of the server CPU market
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Samsung Electronics (005930)Unveiled the next generation DRAM DDR5 (photo) that can transmit two UHD movies with a capacity of 30 gigabytes (GB) per second. With the power of the’Hi-K Metal Gate (HKMG) process’, an innovative process that solves the leakage current problem that inevitably follows micro-processing, this product is expected to be a key component of the future industry as it can significantly lower power consumption. In particular, Samsung Electronics is also promoting the supply of DDR5, which is connected to Intel’s next-generation server central processing unit (CPU).
According to Samsung Electronics on the 25th, the DDR5 module introduced this time has a capacity of 512 gigabytes (GB), and the data transfer speed can be expanded to 7,200 Mbps (transferring 7,200 megabits per second) in the future. This is the speed that can process about 2 UHD movies with a capacity of 30GB per second. This module is suitable for data centers and supercomputing as it requires relatively low power despite its high capacity and high performance. In particular, Samsung Electronics tried to differentiate itself by applying the innovative HKMG process to the DDR5 module in consideration of the future computing environment with high power consumption.
The HKMG process focuses on improving the leakage current phenomenon that flows somewhere other than where it should flow as the semiconductor process becomes finer. The power consumption of the DDR5 module will be reduced by 13% compared to the previous one.
An official of the company explained, “The HKMG process has been mainly used in the system semiconductor process, but it has both memory and system semiconductor process capabilities, so it can be preemptively applied to DRAM, which is a memory semiconductor.”
Samsung Electronics applied 8-layer silicon through-electrode (TSV) technology to this product for the first time as a general-purpose DRAM. The 8-stage TSV is an innovative technology that realizes high capacity in a situation where the size of the module is limited. When a consumer configures a system using this product, the capacity can be expanded up to 16 terabytes (TB) within the same size.
In addition to the release of this product, Samsung Electronics announced the fact that it has partnered with Intel. On the 23rd (local time), Intel, which aimed at Samsung Electronics, announced its goal of investing 20 billion dollars to enter the foundry business in earnest, and made clear its intention to maintain the existing partnership with this announcement. Samsung Electronics is also willing to take the lead in the DRAM market by actively utilizing Intel, the No. 1 company that dominates 90% of the global server CPU market. The cooperation between the two companies is expected to be implemented with DDR5 compatible with’Sapphire Rapids’, Intel’s next-generation CPU, Xeon scalable processor.
/ Reporter Sumin Lee [email protected]
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