On the 4th, the Korea Institute of Science and Technology (KIST) reported that the research result of Dr. Joon-Woo Choi’s team of the Spin Convergence Research Group on the 4th showed that Van der Waals magnetic material, which is attracting attention as a candidate material for spin memory, stores information more than 10 times better than other materials. ‘(Nano Letters).
Bonded structure of Fe₃GeTe₂ van der Waals magnetic material and antiferromagnetic material with layered structureThe material used by the researchers is’FGT’ (Fe₃GeTe₂), a van der Waals magnetic material. This material is magnetic. It is a layered material bonded by’van der Waals bond’, which is a weak interaction between molecules, and can be applied to semiconductors.
The researchers oxidized the FGT material by physical exfoliation. Then, a layer of antiferromagnetic material appeared on the surface, and the phenomenon of’exchange bias’ in which the ferromagnetic material was aligned in a specific direction appeared.
Exchange bias refers to the property that a ferromagnetic material is aligned in a specific direction through interaction with an antiferromagnetic material.
Usually, when the material is thick, the exchange bias is weakened, and the information storage capacity is also reduced.
However, unlike conventional magnetic materials, the researchers reported that FGT materials exhibited an exchange bias that was more than 10 times greater than that of conventional magnetic materials, regardless of the thickness.
The researchers explained that this property was exhibited by the interlayer interactions of the Van der Waals material.
Dr. Joon-Woo Choi said, “It is expected that the development of new materials for spin semiconductors with excellent performance will be possible by utilizing the junction structure of van der Waals magnetic material and van der Waals materials of different properties in the future.”
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